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FDA28N50 N-Channel MOSFET
August 2008
FDA28N50
N-Channel MOSFET
500V, 28A, 0.155 Features
* RDS(on) = 0.122 ( Typ.)@ VGS = 10V, ID = 14A * Low gate charge ( Typ. 80nC) * Low Crss ( Typ. 42pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
UniFETTM
Description
These N-Channel enhancement mode power field effect transistors are produced using Failchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-3PN
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 500 30 28 17 112 2391 28 31 5 310 2.5 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.4 0.24 40
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDA28N50 Rev. A
1
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FDA28N50 N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FDA28N50 Device FDA28N50 Package TO-3PN Reel Size Tape Width Quantity 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V VDS = 500V, VGS = 0V 500 0.59 1 10 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 14A VDS = 20V, ID = 14A
(Note 4)
3.0 -
0.122 34
5.0 0.155 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 28A VGS = 10V VDS = 25V, VGS = 0V f = 1MHz (Note 4, 5)
3866 576 42 80 21 32
5140 766 63 105 -
pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 28A RG = 25
(Note 4, 5)
-
56 126 210 110
122 262 430 230
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 28A VGS = 0V, ISD = 28A dIF/dt = 100A/s
(Note 4)
-
530 8
28 112 1.4 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.1mH, IAS = 28A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 28A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDA28N50 Rev. A
2
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FDA28N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
200
100
ID,Drain Current[A]
ID,Drain Current[A]
10
150 C
o
-55 C
o
10
25 C *Notes: 1. VDS = 20V 2. 250s Pulse Test
o
*Notes: 1. 250s Pulse Test
1 0.2
2. TC = 25 C
o
1 VDS,Drain-Source Voltage[V]
10
20
1
4
5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.25
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
200
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.20
150 C
o
VGS = 10V
10
25 C
o
0.15
VGS = 20V
0.10
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
0
25 50 75 ID, Drain Current [A]
100
1 0.2
2. 250s Pulse Test
0.6 1.0 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
8000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VDS = 100V VDS = 250V VDS = 400V
8
6000 Capacitances [pF]
Ciss
*Note: 1. VGS = 0V 2. f = 1MHz
6
4000
Coss
4
2000
Crss
2
*Note: ID = 28A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
20 40 60 Qg, Total Gate Charge [nC]
80
90
FDA28N50 Rev. A
3
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FDA28N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75
*Notes: 1. VGS = 10V 2. ID = 14A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.8 -75
-25 25 75 125 o TJ, Junction Temperature [ C]
175
-25 25 75 125 o TJ, Junction Temperature [ C]
175
Figure 9. Maximum Safe Operating Area
300
Figure 10. Maximum Drain Current vs. Case Temperature
28
60s 100s 1ms 10ms DC
100
ID, Drain Current [A]
10
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
o o
21
14
1
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
7
0.01
1
10 100 VDS, Drain-Source Voltage [V]
1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05
PDM t1 t2
o
0.01
0.02 0.01
*Notes: 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
1E-3 -5 10
Single pulse
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FDA28N50 Rev. A
4
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FDA28N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA28N50 Rev. A
5
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FDA28N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDA28N50 Rev. A
6
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FDA28N50 N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA28N50 Rev. A
7
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FDA28N50 N-Channel MOSFET
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Rev. I35
FDA28N50 Rev. A
8
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